SMBTA63
SMBTA63, SMBTA64
PNP Silicon Darlington Transistors
High collector current High DC current gain
2 1
VPS05161
Type SMBTA63 SMBTA64
Maximum Ratings Parameter
Marking s2U s2V 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 30 30 10 500 800 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 81 °C Junction temperature Storage temperature m A A m A m W °C
Thermal Resistance Junction
- soldering point 1) Rth JS
210
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Nov-30-2001
SMBTA63, SMBTA64
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE =...
