Datasheet4U Logo Datasheet4U.com

SPW35N60CFD - CoolMOS Power Transistor

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Features

  • TM Power Transistor Product Summary V DS R DS(on),max ID 600 V.
  • New revolutionary high voltage technology.
  • Intrinsic fast-recovery body diode.
  • Extremely low reverse recovery charge.
  • Ultra low gate charge.
  • Extreme dv /dt rated.
  • High peak current capability.
  • Periodic avalanche rated.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – SPW35N60CFD

Datasheet Details

Part number SPW35N60CFD
Manufacturer Infineon Technologies AG
File Size 413.58 KB
Description CoolMOS Power Transistor
Datasheet download datasheet SPW35N60CFD Datasheet
Additional preview pages of the SPW35N60CFD datasheet.

📁 Similar Datasheet

  • SPW35N60CFD - N-Channel MOSFET (INCHANGE)
  • SPW35N60C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPW35N60C3 - N-Channel MOSFET (INCHANGE)
  • SPW32N50C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPW32N50C3 - N-Channel MOSFET (INCHANGE)
  • SPW3842S - High Performance Current Mode Controlers (SeCoS)
  • SPW-TKP80E - Heaven Tsukatachi kitchen (Sanyo)
  • SPW07N60CFD - Power-Transistor (Infineon Technologies)
  • SPW11N60C2 - Cool MOS Power Transistor (Infineon Technologies)
  • SPW11N60C3 - Cool MOS Power Transistor (Infineon Technologies)
Other Datasheets by Infineon Technologies AG

    Full PDF Text Transcription

    Click to expand full text
    www.DataSheet4U.com SPW35N60CFD CoolMOS Features TM Power Transistor Product Summary V DS R DS(on),max ID 600 V • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant 0.
    Published: |