70N10L Overview
TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg ID =70 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation
| Part number | 70N10L |
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| Manufacturer | Infineon |
| File Size | 550.72 KB |
| Description | SPI70N10L |
| Datasheet | 70N10L_InfineonTechnologies.pdf |
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TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg ID =70 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 70N10 | N-Channel MOSFET Transistor | Inchange Semiconductor |
| Part Number | Description |
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