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BAT24-02LS
Single silicon RF Schottky diode
Product description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz.
Feature list
• Low inductance LS = 0.2 nH (typical) • Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz • TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print • Pb-free, RoHS compliant and halogen free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BAT24-02LS Datasheet
