BAT24-02LS Datasheet | Infineon

Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz. Feature list - Low inductance LS = 0.2 nH (typical) - Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz - TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print - Pb-free, RoHS pliant and halogen free Product validation Qualified for industrial...