BSC017N04NSG
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel
- Normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- 100% Avalanche tested
- Pb-free plating; Ro HS pliant;
- Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
40 V 1.7 mΩ 100 A
PG-TDSON-8
Type BSC017N04NS G
Package PG-TDSON-8
Marking 017N04NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=10 V, T A=25 °C, R th JA=50 K/W2)
I D,pulse I AS E AS V GS
T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω
400 50 295 m J ±20 V
Rev. 1.24 page 1
2009-10-22
Maximum...
