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BSC072N03LD G
OptiMOS™3 Power-Transistors
Features • Dual N-channel, logic level • Fast switching MOSFETs for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSC072N03LD G Package PG-TDSON-8 Marking 072N03LD
Product Summary V DS R DS(on),max ID 30 7.2 20 PG-TDSON-8 V mΩ A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value ≤10 secs Continuous drain current ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.
BSC072N03LDG Datasheet
