BSC600N25NS3
Features
- N-channel,normallevel
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Halogen-freeaccordingto IEC61249-2-21
- Idealforhigh-frequencyswitchingandsynchronousrectification
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
60 mΩ
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4 3
2 1
Drain Pin 5-8
Gate
- 1
Pin 4
Source
- 1: Internal body diode Pin 1-3
Type/Ordering Code BSC600N25NS3 G
Package PG-TDSON-8
Marking 600N25NS
Related Links
- 1) J-STD20 and JESD22
Final Data Sheet
Rev.2.5,2022-11-09
Opti MOSTM3Power-Transistor,250V
BSC600N25NS3G...
