BSL306N
BSL306N is Small-Signal-Transistor manufactured by Infineon.
Features
- Dual N-channel
- Enhancement mode
- Logic level (4.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
- 100% lead-free; Ro HS pliant
- Halogen free according to IEC61249-2-21
Product Summary
VDS RDS(on),max
VGS=10 V VGS=4.5 V
30 V 57 m W 93 2.3 A
PG-TSOP-6 6 54
1 23
Type
Package Tape and Reel Information
BSL306N TSOP-6
H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Marking s PN
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
Avalanche energy, single pulse
E AS I D=2.3 A, R GS=25 W
Reverse diode dv /dt
Gate source voltage Power dissipation1) Operating and storage temperature dv /dt
I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C
V GS
P tot T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1 1) Remark: one of both transistors active
Lead Free Packing Yes Non dry
Value 2.3 1.8...
