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BSO200P03SH - Power-Transistor

Datasheet Summary

Features

  • P-Channel.
  • Enhancement mode.
  • Logic level.
  • 150°C operating temperature.
  • Qualified according JEDEC for target.

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Datasheet preview – BSO200P03SH

Datasheet Details

Part number BSO200P03SH
Manufacturer Infineon Technologies
File Size 322.80 KB
Description Power-Transistor
Datasheet download datasheet BSO200P03SH Datasheet
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OptiMOS™-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID BSO200P03S H -30 V 20 mΩ -9.1 A PG-DSO-8 Type BSO200P03S H Package PG-DSO-8 Marking 200P3S Lead free Yes Halogen free Yes packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C1) T A=70 °C1) T A=25 °C2) Value Unit ≤10 secs steady state -9.1 -7.4 A -7.3 -5.9 -36.4 Avalanche energy, single pulse E AS I D=-9.
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