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BSP308 - Sipmos(r) Small-signal-transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • dv/dt rated SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current h S a ee U 4 t m o . c Preliminary data BSP308 VDS ID 4 30 0.05 4.7 V Ω A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 70 °C Pulsed drain current T A = 25 °C Reverse diode dv/dt I S = 4.7 A, V DS =.

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Datasheet Details

Part number BSP308
Manufacturer Infineon
File Size 106.61 KB
Description Sipmos(r) Small-signal-transistor
Datasheet download datasheet BSP308 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w at • N-Channel .D w • Enhancement mode w • Logic Level Features • dv/dt rated SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current h S a ee U 4 t m o .c Preliminary data BSP308 VDS ID 4 30 0.05 4.7 V Ω A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 70 °C Pulsed drain current T A = 25 °C Reverse diode dv/dt I S = 4.7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation w w w t a .D S a e h ID U 4 t e .c G m o 2 1 3 VPS05163 Pin 1 Pin 2/4 D PIN 3 S Value 4.7 3.9 Unit A ID puls dv/dt 18.