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BSS83P - Transistor

Key Features

  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • Logic Level.
  • dv/dt rated Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current VDS RDS(on) ID -60 2 -0.33 3 V W A.
  • Qualified according to AEC Q101.
  • Halogen-free according to IEC61249-2-21 2 1 VPS05161 Type BSS 83 P Package Tape and Reel Marking Pin 1 PIN 2 PG-SOT-23 H6327: 3000pcs/r. YAs GS Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parame.

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BSS 83 P SIPMOS® Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current VDS RDS(on) ID -60 2 -0.33 3 V W A • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 2 1 VPS05161 Type BSS 83 P Package Tape and Reel Marking Pin 1 PIN 2 PG-SOT-23 H6327: 3000pcs/r. YAs GS Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA = 25 °C TA = 70 °C ID Pulsed drain current TA = 25 °C Avalanche energy, single pulse WID = -0.33 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt ID puls EAS EAR dv/dt IS = -0.