BTS3118N Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb HITFET In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection ESD Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 M Datasheet 1 Rev.
BTS3118N Key Features
- Logic Level Input
- Input Protection (ESD)
- Thermal shutdown
- Green product (RoHS pliant)
- Overload protection
- Short circuit protection
- Overvoltage protection
- Current limitation
- Analog driving possible