BTS7904B Datasheet | Infineon

.Data Sheet.co.kr Opti MOS® -T PN Half Bridge Product Summary P V DS -30 12.7 -40 N 55 11.7 40 V mΩ A Features - Dual p- and n-channel MOSFET - Automotive AEC Q101 qualified - Green package (Ro HS pliant) - Ultra low R DS(on) - 150 °C operating temperature R DS(on),max5) ID PG-TO263-5-1 Type BTS7904B Package PG-TO263-5-1 Marking 7904B Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Continuous drain current1) ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS IAS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=±20 A -40 -40 -160 350 -40 -16 / +5 96 -55 ... 150 55/150/56 Value N 40 40 160 200 40 +16 / -163) 69 m J A V W °C A Unit 1.0 page 1 2008-07-18 Datasheet pdf - http://..net/ .Data Sheet.co.kr Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case SMD version, device on PCB P R th JC N R th JA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-1 m A N Gate threshold voltage P V GS(th) N Zero gate voltage drain current P I DSS V GS=0 V, I D=1 m A V DS=V GS, I D=-70 µA V DS=V GS, I D=40 µA V DS=-18 V, V GS=0 V, T j=25 °C V DS=-18 V, V GS=0 V, T j=125 °C N V DS=18 V, V GS=0 V, T j=25 °C V DS=18 V, V GS=0 V, T j=125 °C Gate-source leakage current P I GSS N Drain-source on-state resistance5) P R DS(on) N P N V GS=-16 V, V DS=0 V V GS=16 V, V DS=0 V V GS=-10 V, I D=-20 A V GS=10 V, I D=20 A V GS=-4.5 V, I D=-12.5 A V GS=4.5 V, I D=20 A -30 55 -1 1.2 -1.5 1.7 -0.01 -2.1 2.2 -1 µA V 1.3 1.8 62 45 K/W Values typ. max. Unit - -1 -100 - 0.01 - 1 -10 1 6.9 9.4 17.2 16.5 100 -100 100 12.7 11.7 20.7 20.2 mΩ n A 1.0 page...