BUP311D Datasheet | Infineon

Infineon IGBT With Antiparallel Diode BUP 311D Preliminary data sheet - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Including fast free-wheel diode Former Development ID: BUP 3JKD Pin 1 G Type BUP 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code ON REQUEST C67078-A4102 Pin 3 E Package TO-218 AB 1200V A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 20 12 TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C Diode forward current IF tbd TC = 100 °C Pulsed diode current, tp = 1 ms IFpuls tbd TC = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group May-06-1999 Infineon Maximum Ratings Parameter Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance,...