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Infineon
IGBT With Antiparallel Diode
BUP 311D
Preliminary data sheet
• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Pin 1 G Type BUP 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code ON REQUEST C67078-A4102 Pin 3 E
VCE
IC
Package TO-218 AB
1200V A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 20 12
TC = 25 °C TC = 100 °C
Pulsed collector current, tp = 1 ms
ICpuls
40
TC = 25 °C
Diode forward current
IF
tbd
TC = 100 °C
Pulsed diode current, tp = 1 ms
IFpuls
tbd
TC = 25 °C
Power dissipation
Ptot
125
W -55 ... + 150 -55 ...
BUP311D Datasheet
