Datasheet4U Logo Datasheet4U.com

H20N120R3 - Reverse conducting IGBT

Key Features

  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.
  • TrenchStop ® technology.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop ® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coefficient in V CEsat • Low EMI • Qualified according to JEDEC J-STD-020 and JESD-022 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • Inductive cooking C G E !"#$% () * + , . ( + & '" % &/ 0 .