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H30T100 - IGBT

Datasheet Summary

Features

  • 1.1V Forward voltage of antiparallel rectifier diode.
  • Specified for TJmax = 175°C.
  • TrenchStop® and Fieldstop technology for 1000 V.

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Datasheet preview – H30T100

Datasheet Details

Part number H30T100
Manufacturer Infineon Technologies
File Size 336.67 KB
Description IGBT
Datasheet download datasheet H30T100 Datasheet
Additional preview pages of the H30T100 datasheet.

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Full PDF Text Transcription

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Soft Switching Series IHW30N100T q C Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode Features: • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C • TrenchStop® and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications Type IHW30N100T VCE 1000V IC 30A VCE(sat),Tj=25°C 1.
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