H6N03LAG Datasheet Text
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OptiMOS®2 Power-Transistor
Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target application
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G
Product Summary V DS R DS(on),max (SMD version) ID
25 V 6 mΩ 50 A
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package Marking
PG-TO252-3-11 H6N03LA
PG-TO252-3-23 H6N03LA
PG-TO251-3-11 H6N03LA
PG-TO251-3-1 H6N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current...