IDB30E120
IDB30E120 is Fast Switching Emitter Controlled Diode manufactured by Infineon.
Feature
- 1200 V Emitter Controlled technology
- Fast recovery
- Soft switching
- Low reverse recovery charge
- Low forward voltage
- Easy paralleling
- Ro HS pliant
Product Summary
VRRM
IF VF Tjmax
30 1.65 150
V A V °C
PG-TO263-3-2
1 3
Type IDB30E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
- D30E120 NC
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage Continous forward current
TC=25°C TC=90°C
VRRM IF
Surge non repetitive forward current
IFSM
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward...
