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IDB30E120 - Fast Switching Emitter Controlled Diode

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Part number IDB30E120
Manufacturer Infineon
File Size 359.75 KB
Description Fast Switching Emitter Controlled Diode
Datasheet download datasheet IDB30E120 Datasheet
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Fast Switching Emitter Controlled Diode Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS compliant IDB30E120 Product Summary VRRM 1200 IF VF Tjmax 30 1.65 150 V A V °C PG-TO263-3-2 2 1 3 Type IDB30E120 Package Ordering Code Marking Pin 1 PIN 2 PIN 3 PG-TO263-3-2 - D30E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C VRRM IF Surge non repetitive forward current IFSM TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current IFRM TC=25°C, tp limited by Tjmax, D=0.
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