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IDC05S60C - 2nd generation thinQ! SiC Schottky Diode

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Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved m et4U.co DataSheet4U.com At

Features

  • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability.

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Datasheet Details

Part number IDC05S60C
Manufacturer Infineon Technologies
File Size 228.31 KB
Description 2nd generation thinQ! SiC Schottky Diode
Datasheet download datasheet IDC05S60C Datasheet
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www.DataSheet4U.com IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: • SMPS, PFC, snubber C A Chip Type IDC05S60C VBR 600V IF 5A Die Size 1.45 x 1.162 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment DataSheet4U.com 1.45x 1.162 mm 1.213 x 0.925 1.68 / 1.
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