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IGW50N65F5 - IGBT

Key Features

  • High speed F5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low QG.
  • Ideal fit with SIC Schottky Diode in boost converters.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW50N65F5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW50N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology  FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.