IHY30N160R2
IHY30N160R2 is Reverse conducting IGBT manufactured by Infineon.
.Data Sheet.co.kr
Soft Switching Series
Trench Stop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features
:
- Powerful monolithic body diode with very low forward voltage
- Body diode clamps negative voltages
- Trench and fieldstop technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Low EMI
- New TO-247HC package offers increased air & creepage distances pared to TO247 package
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; Ro HS pliant
- Halogen free (according to IEC 61249-2-21)
- plete product spectrum and PSpice models: http://.infineon./igbt/ Applications:
- Inductive cooking
- Soft switching applications Type IHY30N160R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 µs, D < 0.01) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE 1600V
IC 30A
VCE(sat),Tj=25°C 1.8V
Tj,max 175°C
Marking H30R1602
Package PG-TO247HC-3
Symbol VCE IC
Value 1600 60 30 90 90 60 30
Unit V A
ICpuls IF
IFpuls...