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IHY30N160R2 - Reverse conducting IGBT

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Infineon Technologies

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IHY30N160R2 Reverse conducting IGBT by Infineon Technologies - Datasheet Preview — Datasheet preview – IHY30N160R2

Datasheet Details

Part number	IHY30N160R2
Manufacturer	Infineon Technologies
File Size	678.06 KB
Description	Reverse conducting IGBT
Datasheet	IHY30N160R2 Datasheet
Additional preview pages of the IHY30N160R2 datasheet.

Product details

Features

Powerful monolithic body diode with very low forward voltage.
Body diode clamps negative voltages.
Trench and fieldstop technology offers: - very tight parameter distribution - high ruggedness, temperature stable behavior.
NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat).
Low EMI.
New TO-247HC package offers increased air & creepage distances compared to TO247 package.
Qua.

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Published: Dec 25, 2011 |