IKP20N60T
IKP20N60T is IGBT manufactured by Infineon.
Trench Stop® Series
IKP20N60T IKW20N60T
Low Loss Duo Pack : IGBT in Trench Stop® and Fieldstop technology with soft, fast recovery anti-parallel Em Con HE diode
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- Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time
- 5µs Designed for :
- Frequency Converters
- Uninterrupted Power Supply Trench Stop® and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat) PG-TO-220-3-1 Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Em Con HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; Ro HS pliant plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 600V 600V IC 20A 20A VCE(sat),Tj=25°C 1.5V 1.5V Tj,max 175°C 175°C Marking K20T60 K20T60 Package PG-TO-220-3-1 PG-TO-247-3
PG-TO-247-3
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- Type IKP20N60T IKW20N60T
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C
..net
Symbol VCE IC
Value 600 40 20
Unit V A
TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
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ICpuls IF IFpuls VGE t SC Ptot Tj Tstg
- 60 60 40 20 60 ±20 5 166 -40...+175 -55...+175 260 V µs W °C
TC = 25°C TC = 100°C
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
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