IKW25N120H3 - High speed IGBT

Product Overview

Infineon Technologies

Datasheet Details

Part number	IKW25N120H3
Manufacturer	Infineon Technologies
File Size	1.60 MB
Description	High speed IGBT
Datasheet	IKW25N120H3 Datasheet
Additional preview pages of the IKW25N120H3 datasheet.

Product details

Description

Type IKW25N120H3 C G E Package PG-TO247-3 Marking K25H1203 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-09-08 IKW25N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology Table of contents Table of contents Description .

Features

VCE = 1200 V.
IC = 25 A.
Very low VCE,sat.
Low EMI.
Very soft, fast recovery antiparallel diode.
Maximum junction temperature Tvjmax = 175°C.
Qualified according to JEDEC for target.

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Published: Oct 30, 2014 |