Part IKW50N60H3
Description IGBT
Manufacturer Infineon
Size 2.07 MB
Infineon
IKW50N60H3

Overview

  • verylowVCEsat
  • lowEMI
  • Verysoft,fastrecoveryanti-paralleldiode
  • maximumjunctiontemperature175°C
  • qualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • completeproductspectrumandPSpiceModels: Applications:
  • uninterruptiblepowersupplies
  • weldingconverters
  • converterswithhighswitchingfrequency G C E C G E KeyPerformanceandPackageParameters Type IKW50N60H3 VCE 600V IC 50A VCEsat,Tvj=25°C 1.85V Tvjmax 175°C Marking K50H603 Package PG-TO247-3 2 Rev.2.2,2014-03-12