IKW75N60T - IGBT

Infineon Technologies

Datasheet Details

Part number	IKW75N60T
Manufacturer	Infineon
File Size	852.10 KB
Description	IGBT
Datasheet	IKW75N60T Datasheet
Additional preview pages of the IKW75N60T datasheet.

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Full PDF Text Transcription

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Positive temperature coefficient in VCE(sat)  very tight parameter distribution  high ruggedness, temperature stable behaviour  very high switching speed  Low EMI  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.

Published: Jan 16, 2009 |