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IKZ75N65EH5 - IGBT

General Description

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Key Features

  • High speed H5 technology offering.
  • Ultra low loss switching thanks to Kelvin emitter pin in combination with.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKZ75N65EH5 650VDuoPackIGBTanddiode Highspeedseriesfifthgeneration Datasheet IndustrialPowerControl IKZ75N65EH5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode  FeaturesandBenefits: HighspeedH5technologyoffering •UltralowlossswitchingthankstoKelvinemitterpinin combinationwithTRENCHSTOPTM5 •Best-in-classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Qualified