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ILA03N60, ILP03N60 ILB03N60, ILD03N60
LightMOS Power Transistor
C
• • • • • • •
New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates 2.5 kV AC (1 min.)
P-TO-220-3-1 (TO-220AB)
G
E
P-TO-220-3-31 (TO-220 FullPak)
P-TO-263-3-2 (D2-PAK) (TO-263AB)
P-TO-252-3-1 (D-PAK) (TO-252AA)
Type ILA03N60 ILP03N60 ILB03N60 ILD03N60 Maximum Ratings Parameter
VCE 600V 600V 600V 600V
IC 3.0A 3.0A 3.0A 3.0A
VCE(sat),Tj=25°C 2.9V 2.9V 2.9V 2.9V
Tj,max 150°C 150°C 150°C 150°C
Package P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1 Value ILA03N60 600 3 2.2 9 5.5 4 2.2 9 5.
ILB03N60 Datasheet
