ILB03N60
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ILA03N60, ILP03N60 ILB03N60, ILD03N60
Light MOS Power Transistor
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- New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature Full Pak isolates 2.5 k V AC (1 min.)
P-TO-220-3-1 (TO-220AB)
P-TO-220-3-31 (TO-220 Full Pak)
P-TO-263-3-2 (D2-PAK) (TO-263AB)
P-TO-252-3-1 (D-PAK) (TO-252AA)
Type ILA03N60 ILP03N60 ILB03N60 ILD03N60 Maximum Ratings Parameter
VCE 600V 600V 600V 600V
IC 3.0A 3.0A 3.0A 3.0A
VCE(sat),Tj=25°C 2.9V 2.9V 2.9V 2.9V
Tj,max 150°C 150°C 150°C 150°C
Package P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1 Value ILA03N60 600 3 2.2 9 5.5 4 2.2 9 5.5 0.32 ±30 1 16.5
Ordering Code Q67040-S4626 Q67040-S4628 Q67040-S4627 Q67040-S4625
Symbol VCE TC = 25°C TC = 100°C IC ICpuls IF IFpuls EAS VGE dv/dt Ptot Tstg Ts
Others 4.5 3
Unit V A
Collector-emitter voltage...
