Datasheet4U.com

IPA030N10N3G - Power-Transistor

Product Overview

Infineon Technologies

📥 Download Datasheet

IPA030N10N3G Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPA030N10N3G

Datasheet Details

Part number	IPA030N10N3G
Manufacturer	Infineon Technologies
File Size	316.07 KB
Description	Power-Transistor
Datasheet	IPA030N10N3G Datasheet
Additional preview pages of the IPA030N10N3G datasheet.

Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

📁 Similar Datasheet

IPA030N10N3 - N-Channel MOSFET (INCHANGE)
IPA030N10NF2S - MOSFET (Infineon)
IPA032N06N3 - N-Channel MOSFET (INCHANGE)
IPA032N06N3G - Power-Transistor (Infineon)
IPA037N08N3 - N-Channel MOSFET (INCHANGE)
IPA029N06N - MOSFET (Infineon)
IPA040N06N - MOSFET (Infineon)
IPA040N08NM5S - 80V MOSFET (Infineon)

Other Datasheets by Infineon Technologies

IPA037N08N3G - Power-Transistor
IPA028N08N3G - Power-Transistor
IPA045N10N3G - MOSFET
IPA057N08N3G - MOSFET
IPA075N15N3G - OptiMOS3 Power-Transistor
IPA086N10N3G - MOSFET

Published: Mar 27, 2011 |