IPA045N10N3G
IPA045N10N3G is manufactured by Infineon.
MOSFET
OptiMOSTM3Power-Transistor,100V
Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
4.5 mΩ
ID 64 A
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA045N10N3 G
Package PG-TO220-FP
Marking 045N10N
RelatedLinks
- 1) J-STD20 and JESD22 Final Data...
