IPA057N08N3G
IPA057N08N3G is manufactured by Infineon.
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,80V
OptiMOS™3Power-Transistor IPA057N08N3G
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
OptiMOS(TM)3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
- Fully isolated package (2500 VAC; 1 minute)
Type
IPA057N08N3 G
IPA057N08N3 G
Product Summary VDS RDS(on),max ID
80 V 5.7 mW 60...
