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IPA086N10N3G - MOSFET

Infineon

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IPA086N10N3G mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPA086N10N3G
Manufacturer	Infineon
File Size	523.96 KB
Description	MOSFET
Datasheet	IPA086N10N3G Datasheet

Overview

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.

Key Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IPA086N10N3	N-Channel MOSFET	INCHANGE
	IPA086N10N3	MOSFET	Infineon

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