IPA65R190C6 Datasheet | Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor Cool MOS C6 650V Cool MOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V Cool MOS™ C6 Power Transistor 1 Description Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ C6 series bines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more pact, lighter, and cooler. Features - Extremely low losses due to very low FOM Rdson- Qg and Eoss - Very high mutation ruggedness - Easy to use/drive - JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Tele and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally remended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 700 0.19 73 66 5.9 500 V  n C A µJ A/µs IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 drain pin 2 gate pin 1 source pin 3 Type / Ordering Code IPW65R190C6 IPB65R190C6 IPI65R190C6 IPP65R190C6 IPA65R190C6 Package PG-TO247 PG-TO263 PG-TO262 PG-TO220 PG-TO220 Full...