IPA65R600E6 Datasheet | Infineon

MOSFET Metall Oxide Semiconductor Field Effect Transistor Cool MOS E6 650V Cool MOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 650V Cool MOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description Cool MOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Cool MOSTM DE series bines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more pact, lighter, and cooler. Features - Extremely low losses due to very low F O M R dson- Qg and E oss - Very high mutation ruggedness - Easy to use/drive - JEDEC1) qualified, Pb-free plating, available in Halogen free mold pound...