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IPA65R600E6 - MOSFET

Description

CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Features

  • Extremely low losses due to very low F O M R dson.
  • Qg and E oss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Appl.

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Datasheet Details

Part number IPA65R600E6
Manufacturer Infineon Technologies
File Size 1.12 MB
Description MOSFET
Datasheet download datasheet IPA65R600E6 Datasheet
Additional preview pages of the IPA65R600E6 datasheet.

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MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
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