IPB015N04NG
IPB015N04NG is Power Transistor manufactured by Infineon.
Type
IPP015N04N G IPB015N04N G
OptiMOS™3 Power-Transistor
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC for target applications
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 100% Avalanche tested
- Pb-free plating; RoHS pliant
- Halogen-free according to IEC61249-2-21 Type IPB015N04N G IPP015N04N G
1)
Product Summary V DS R DS(on),max ID 40 1.5 120 V mΩ A
Package Marking
PG-TO263-3 015N04N
PG-TO220-3 015N04N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V...
