IPB016N06L3G Datasheet | Infineon

Type IPB016N06L3 G OptiMOS™3 Power-Transistor Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance RDS(on) - N-channel, logic level - 100% avalanche tested - Pb-free plating; RoHS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Type IPB016N06L3 G Product Summary V DS R DS(on),max ID 60 1.6 180 V mΩ A Package Marking PG-TO-263-7 016N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3)...