IPB019N06L3G Datasheet | Infineon

Type IPB019N06L3 G Opti MOS™3 Power-Transistor Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance RDS(on) - N-channel, logic level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G Product Summary V DS R DS(on),max ID 60 1.9 120 V mΩ A Package Marking PG-TO-263-3 019N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 120 120 480 634 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=100 A, R GS=25 Ω m J V W °C T C=25 °C 250 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R th JC=0.6 K/W the chip is able to carry 269 A. See figure 3 for more detailed information See figure 13 for more detailed information ..net Rev. 2.2 page 1 2009-11-16 IPB019N06L3...