IPB023N04NG
IPB023N04NG is Power-Transistor manufactured by Infineon.
Features
Q& ( ,
- 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q- E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C
Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"[# Q F2 =2 ? 496 D6CD65 Q) 3 7B66 A=2 D:? 8 + @" , 4@> A=:2 ? D Q" 2 =@86? 7B66 2 44@B5:? 8 D@ #
Product Summary V 9H R ,@? >2 H I9
Type
#) ' ' !
#) ) ' ' !
IPP023N04N G IPB023N04N G
,( K
- &+ Z" 1( 6
Package Marking
E=%ID- .+%+ (- +C(,C
E=%ID-
- (%+ (- +C(,C
Maximum ratings, 2 DT W T E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
@? D:? E@EC5B2 :? 4EBB6? D
) E=C65 5B2 :? 4EBB6? D- # F2 =2 ? 496 4EBB6? D C:? 8=6 AE=C6+# F2 =2 ? 496 6? 6B8I C:? 8=6 AE=C6 !2 D6 C@EB46 F@=D2 86 )# $ , - 2 ? 5 $ ,
I 9 V =H / T 8 T
V =H / T 8 T
I 9$]a Y_R I 6H E 6H V =H
T 8 T T 8 T I 9 R =H "
Value
1( 1( ,(( 1( )-( q- (
Unit 6
Z@ K
+ 6F
A2 86
Maximum ratings, 2 DT W T E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
) @G6B5:CC:A2 D:@?
P `` T 8 T
( A6B2 D:? 8 2 ? 5 CD@B2 86 D6> A6B2 DEB6 T W T _`T
# 4=:> 2 D:4 42 D68@BI #' #...
