IPB026N06N Overview
Type OptiMOSTM Power-Transistor.
IPB026N06N Key Features
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target
IPB026N06N Datasheet Details
| Part number | IPB026N06N |
|---|---|
| Datasheet | IPB026N06N-InfineonTechnologies.pdf |
| File Size | 541.19 KB |
| Manufacturer | Infineon |
| Description | Power-Transistor |
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