IPB026N06N Description
Type OptiMOSTM Power-Transistor.
IPB026N06N Key Features
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target
- Part: IPB026N06N
- Manufacturer: Infineon
- Size: 541.19 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IPB026N06N | N-Channel MOSFET |