IPB026N06N
IPB026N06N is Power-Transistor manufactured by Infineon.
Features
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
60 V 2.6 m W 100 A 65 n C 56 n C
PG-TO263-3
Type IPB026N06N
Package PG-TO263-3
Marking 026N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
V GS=10 V, T C=25 °C, R th JA =50K/W
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
110 m J
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22 2) See figure 3 for more detailed information
3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev.2.2 page 1
2012-12-20
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power...
