• Part: IPB057N06N
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 548.28 KB
Download IPB057N06N Datasheet PDF
Infineon
IPB057N06N
IPB057N06N is Power-Transistor manufactured by Infineon.
Features - Optimized for synchronous rectification - 100% avalanche tested - Superior thermal resistance - N-channel, normal level - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 60 V 5.7 m W 45 A 32 n C 27 n C PG-TO263-3 Type IPB057N06N Package PG-TO263-3 Marking 057N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 45 A 45 V GS=10 V, T C=25 °C, R th JA =50K/W Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W 60 m J Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 1 2012-12-20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power...