IPB057N06N Overview
Type OptiMOSTM Power-Transistor.
IPB057N06N Key Features
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target
Datasheet Details
| Part number | IPB057N06N |
|---|---|
| Manufacturer | Infineon |
| File Size | 548.28 KB |
| Description | Power-Transistor |
| Datasheet | IPB057N06N-InfineonTechnologies.pdf |
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