IPB091N06NG - Power-Transistor

Features

Low gate charge for fast switching.

Infineon Technologies

Datasheet Details

Part number	IPB091N06NG
Manufacturer	Infineon Technologies
File Size	481.13 KB
Description	Power-Transistor
Datasheet	IPB091N06NG Datasheet
Additional preview pages of the IPB091N06NG datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IPB091N06N G IPP091N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 9.

Published: Apr 9, 2008 |