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IPB093N04LG - Power-Transistor

Key Features

  • Fast switching MOSFET for SMPS.
  • Optimized technology for DC/DC converters.
  • Qualified according to JEDEC for target.

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www.DataSheet4U.com Type IPB093N04L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant IPB093N04L G Type • Pb-free plating; RoHS compliant 1) Product Summary V DS R DS(on),max ID 40 9.3 50 V mΩ A Package Marking PG-TO263-3 093N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.