IPB09N03LAG - Power-Transistor

Features

Ideal for high-frequency dc/dc converters.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IPB09N03LAG
Manufacturer	Infineon Technologies
File Size	311.26 KB
Description	Power-Transistor
Datasheet	IPB09N03LAG Datasheet
Additional preview pages of the IPB09N03LAG datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IPB09N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 8.

Published: Apr 9, 2008 |