IPB100N06S3-03 Datasheet | Infineon

Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested - ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 3.0 100 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-87982 SP0000-87992 SP0000-87980 Marking 3PN0603 3PN0603 3PN0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D=50 A Value Unit A 100 400 690 55 ±20 300 -55 ... +175 55/175/56 m J V V W °C Rev. 1.0 page 1 2005-09-16 .. IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) V DS=V GS, I D=230 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 55 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 µA - 1 1 2.8 2.5 100 100 3.3 3 n A mΩ Rev. 1.0 page 2 2005-09-16 .. IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Para...