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IPB25N06S3-25 - Power-Transistor

This page provides the datasheet information for the IPB25N06S3-25, a member of the IPB-25N Power-Transistor family.

Datasheet Summary

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested.
  • ESD Class 1C (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 24.8 25 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO2.

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Datasheet preview – IPB25N06S3-25

Datasheet Details

Part number IPB25N06S3-25
Manufacturer Infineon Technologies
File Size 192.59 KB
Description Power-Transistor
Datasheet download datasheet IPB25N06S3-25 Datasheet
Additional preview pages of the IPB25N06S3-25 datasheet.

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www.DataSheet4U.com IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 1C (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 24.
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