IPB45N06S4L-08 - OptiMOS-T2 Power-Transistor

Datasheet Summary

Features

N-channel - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L08 4N06L08 4N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Condi.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	IPB45N06S4L-08
Manufacturer	Infineon Technologies
File Size	235.19 KB
Description	OptiMOS-T2 Power-Transistor
Datasheet	IPB45N06S4L-08 Datasheet
Additional preview pages of the IPB45N06S4L-08 datasheet.

📁 Similar Datasheet

IPB407N30N - MOSFET (Infineon)
IPB407N30N - N-Channel MOSFET (INCHANGE)
IPB009N03L - MOSFET (Infineon)
IPB010N06N - MOSFET (Infineon)
IPB011N04L - Power Transistor (Infineon)
IPB011N04NF2S - MOSFET (Infineon)
IPB013N06NF2S - 60V MOSFET (Infineon)
IPB015N04L - N-Channel MOSFET (INCHANGE)
IPB015N04L - Power Transistor (Infineon)
IPB015N04N - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon Technologies

IPB45N06S4-09 - OptiMOS-T2 Power-Transistor
IPB45N06S3-16 - OptiMOS-T Power-Transistor
IPB45N06S3L-13 - OptiMOS-T2 Power-Transistor
IPB45N04S4L-08 - OptiMOS-T2 Power-Transistor
IPB45P03P4L-11 - OptiMOS-P2 Power-Transistor
IPB47N10S-33 - SIPMOS Power-Transistor
IPB47N10SL-26 - SIPMOS Power-Transistor
IPB009N03LG - MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 7.

Published: Oct 20, 2011 |