IPB60R099CP
IPB60R099CP is Power Transistor manufactured by Infineon.
Cool MOSTM Power Transistor
Features
- Worldwide best R ds,on in TO263
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V Ω n C
PG-TO263
Cool MOS CP is specially designed for:
- Hard switching SMPS topologies for Server and Tele
Type IPB60R099CP
Package PG-TO263
Ordering Code SP000088490
Marking 6R099
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.2 11 50 ±20 ±30 255 -55 ... 150 W °C A V/ns V m J Unit A
..net
Rev. 2.0 page 1
2006-06-19
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current
2)
Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. T C=25 °C
Value 18 93 15 Values typ. max.
Unit A
Reverse diode d v /dt 4) Parameter
V/ns Unit
Thermal characteristics Thermal resistance, junction
- case R th JC R th JA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL 1 0.5 62 K/W
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