• Part: IPB60R099CPA
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 374.03 KB
Download IPB60R099CPA Datasheet PDF
Infineon
IPB60R099CPA
IPB60R099CPA is Power Transistor manufactured by Infineon.
Cool MOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω n C Features - Worldwide best Rds,on in TO263 - Ultra low gate charge - Extreme dv/dt rated - High peak current capability - Automotive AEC Q101 qualified - Green package (Ro HS pliant) Cool MOS CPA is specially designed for: - DC/DC converters for Automotive Applications PG-TO263-3 Type IPB60R099CPA Package PG-TO263-3-2 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions ID T C=25 °C T C=100 °C Value 31 19 93 800 1.2 11 Unit A Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V m J A V/ns V W °C V DS=0...480 V static T C=25 °C 50 ±20 255 -40 ... 150 -40 ... 150 ..net Rev. 2.1 page 1 2009-03-25 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R th JC R th JA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area4) MSL1, reflow acc. to IPC-JEDEC J-STD020C 0.5 62 K/W T C=25 °C Value 18 93 15 Values typ. max. V/ns Unit Unit...