IPB60R125CP Datasheet | Infineon

Cool MOSTM Power Transistor Features - Lowest figure-of-merit RONx Qg - Ultra low gate charge - Extreme dv/dt rated - High peak current capability - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 n C PG-TO263 Cool MOS CP is specially designed for: - Hard switching topologies, for Server and Tele Type IPB60R125CP Package PG-TO263 Ordering Code SP000088488 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness I D,pulse E AS E AR I AR dv...