IPB60R199CP
IPB60R199CP is Power Transistor manufactured by Infineon.
Cool MOS® Power Transistor
Features
- Lowest figure-of-merit RONx Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ
650 V 0.199 Ω
32 n C
PG-TO263
Cool MOS CP is specially designed for:
- Hard switching topologies, for Server and Tele
Type IPB60R199CP
Package PG-TO263
Ordering Code SP000223256
Marking 6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
Symbol Conditions
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=6.6 A, V DD=50 V
Avalanche energy, repetitive t
2),3) AR
E AR
I D=6.6 A, V DD=50 V
Avalanche current, repetitive t
2),3)...
