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CoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ
IPB60R199CP
650 V 0.199 Ω
32 nC
PG-TO263
CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom
Type IPB60R199CP
Package PG-TO263
Ordering Code SP000223256
Marking 6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=6.
IPB60R199CP Datasheet
