IPB60R199CPA
IPB60R199CPA is Power Transistor manufactured by Infineon.
Cool MOS® Power Transistor
Product Summary V DS R DS(on),max Q g,typ 600 V
0.199 Ω 33 n C
Features
- Lowest figure-of-merit Ron x Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Automotive AEC Q101 qualified
- Green package (Ro HS pliant) Cool MOS CPA is specially designed for:
- DC/DC converters for Automotive Applications PG-TO263-3
Type IPB60R199CPA
Package PG-TO263-3
Marking 6R199A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature Rev. 2.0 I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg page 1 V DS=0...480 V static T C=25 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V Value 16 10 51 436 0.66 6.6 50 ±20 139 -40 ... 150 -40 ... 150 2009-09-01 A V/ns V W °C m J Unit A
..net
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction
- case R th JC R th JA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area4) T sold MSL 1 0.9 62 K/W
- 35
- Soldering temperature, reflow soldering
- -
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=1.1 m A V DS=600 V, V...
